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| (R) SGSD100 SGSD200 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION APPLICATIONS: AUDIO POWER AMPLIFIER s DC-AC CONVERTER s EASY DRIVER FOR LOW VOLTAGE DC MOTOR s GENERAL PURPOSE SWITCHING APPLICATIONS s 3 2 1 TO-218 DESCRIPTION The SGSD100 is Silicon Epitaxial-Base NPN power transistor in Monolithic Darlington configuration mounted in TO-218 plastic package. It is inteded for use in general purpose and high current amplifier applications. The complementary PNP type is the SGSD200. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO IC I CM IB I BM P tot T stg Tj Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation at T c 25 o C Storage Temperature Max. Operating Junction Temperature Value SGSD100 SGSD200 80 80 25 40 6 10 130 -65 to 150 150 V V A A A A W o o Unit C C For PNP types voltage and current values are negative. October 2003 1/6 SGSD100/SGSD200 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 0.96 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I CEV I CEO I EBO Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (V BE = -0.3V) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 80 V V CE = 80 V V CE = 80 V V CE = 80 V V CE = 60 V V CE = 60 V V EB = 5 V I C = 50 mA 80 T c = 100 o C T c = 100 o C T c = 100 o C Min. Typ. Max. 0.5 1.5 0.1 2 0.5 1.5 2 Unit mA mA mA mA mA mA mA V V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) Collector-Emitter Saturation Voltage IC IC IC IC IC IC = = = = = = 5A 5A 10 A 10 A 20 A 20 A IB IB IB IB IB IB = = = = = = 20 20 40 40 80 80 mA mA mA mA mA mA T c = 100 o C T c = 100 o C T c = 100 o C T c = 100 o C T c = 100 o C T c = 100 o C T c = 100 o C T c = 100 o C 1 600 500 300 0.95 0.8 1.2 1.3 2 2.3 2.6 2.5 1.8 1.6 5000 8000 4000 8000 2000 2000 1.2 0.85 1.6 1.4 2.3 1.3 1.2 1.75 3.5 3.3 3 15000 12000 6000 V V V V V V V V V V V BE(sat) V BE h FE Base-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain I C = 20 A I C = 20 A I C = 10 A I C = 10 A IC IC IC IC IC IC = = = = = = = = = = = = 5A 5A 10 A 10 A 20 A 20 A 5A 5A 10 A 10 A 20 A 20 A IB = 80 mA IB = 80 mA VCE = 3 V VCE = 3 V V CE V CE VCE VCE VCE VCE = = = = = = 3 3 3 3 3 3 V V V V V V VF Diode Forward Voltage I F IF IF IF IF IF Second Breakdown Energy Second Breakdown Current T c = 100 o C T c = 100 o C T c = 100 o C L = 3 mH L = 3 mH t = 500 ms T c = 100 o C 250 250 6 V V V V V V mJ mJ A E s/b I s/b V CC = 30 V V CC = 30 V V CE = 25 V Pulsed: Pulse duration = 300 s, duty cycle 1.5 % For PNP type voltage and current values are negative. 2/6 SGSD100/SGSD200 Safe Operating Areas DC Current Gain (NPN type) DC Current Gain (PNP type) DC Current Gain (NPN type) DC Current Gain (PNP type) Collector-Emitter Saturation Voltage (NPN type) 3/6 SGSD100/SGSD200 Collector-Emitter Saturation Voltage (PNP type) 4/6 SGSD100/SGSD200 TO-218 (SOT-93) MECHANICAL DATA mm MIN. A C D E F G H L2 L3 L5 L6 R O - 4 3.95 31 12.2 4.1 - 0.157 0.5 1.1 10.8 14.7 - 18 4.15 0.155 1.220 0.480 0.161 4.7 1.17 2.5 0.78 1.3 11.1 15.2 16.2 0.019 0.043 0.425 0.578 - 0.708 0.163 TYP. MAX. 4.9 1.37 MIN. 0.185 0.046 0.098 0.030 0.051 0.437 0.598 0.637 inch TYP. MAX. 0.193 0.054 DIM. A C L5 L3 L2 L6 D E H F R 123 P025A G 5/6 SGSD100/SGSD200 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2003 STMicroelectronics - All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6 |
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